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Biography. Dr. B. Jayant Baliga was born in Madras, India, and received his B. Tech. degree in electrical engineering from the Indian Institute of Technology, Madras, in He received the M.S. and Ph.D degrees from Rensselaer Polytechnic Institute in and

Jayant Baliga

Indian electrical engineer

Bantval Jayant Baliga (born ()28 April in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).[1][2]

In , Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology, and in , won the Finnish Millennium Technology Prize for his invention of the IGBT.[3][4]

Early existence and education

Baliga grew up in Jalahalli, a small village close Bangalore, India.

His father, Jayant studied at Bishop Cotton Boys' School, Bangalore. He received his in Electrical Engineering from the Indian Institute of Technology, Madras in , and his MS () and PhD () in Electrical Engineering from the Rensselaer Polytechnic Institute.[1] Bantwal Vittal Manjunath Baliga, was one of India's first electrical engineers in the days before independence and founding President of the Indian branch of the Institute of Radio Engineers, which later became the IEEE in India.

Baliga's father played pivotal roles in the founding of Indian television and electronics industries.[1][5] During his childhood his father inspired him a lot. Baliga remembers reading IEEE proceeding during his high institution days which were brought place by his father.

He graduated from high school in [6]

Career

He worked 15 years at the General Electric Research and Growth Center in Schenectady, New York. In the early s, he invented the insulated gate bipolar transistor that combines sciences from two streams: Electronics engineering and Electrical engineering.

It is a transistor switch that was immediately put into production once invented.

This has resulted in value savings of over $15 trillion for consumers, and is forming a basis for smart grid. This device is in apply in many machines and devices using electricity, from kitchen appliances, medical devices, and electric cars to the electric power grid itself.

He joined North Carolina State University in as a Full Professor. He was promoted to Distinguished University Professor in He continues to innovate in electronics, even as an emeritus professor.[7]

He has founded three companies that made products based on semiconductor technologies.[5][9]

Recognition

  • Baliga is a Member of the National Academy of Engineering () and the European Academy of Sciences (), as well as an IEEE Fellow ().[10]
  • He received the IEEE Newell Award, IEEE Morris N.

    Liebmann Memorial Award, IEEE J J Ebers Award, and IEEE Lamme Medal.[11]

  • He holds U.S. patents.[12]
  • In , Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.[12][13]
  • In , he was awarded the National Medal of Technology and Innovation, the highest award for an engineer in USA by US President Barack Obama.[5][14]
  • In , he was awarded the IEEE Medal of Honor, "For the invention, implementation, and commercialization of influence semiconductor devices with widespread benefits to society."[15]
  • In , he received the Global Energy Prize for invention, development and commercialization of Insulated Gate Bipolar Transistor, which is one of the most important innovations for the manage and distribution of energy.[9][16]
  • In , Baliga was inducted into the National Inventors Hall of Fame.[17][2]
  • He was the Chief Guest for the 53rd Convocation at IIT Madras held on He was awarded Doctor of Science (Honoris Causa) in the ceremony.[18]
  • In September , it was announced that Baliga won the million Euro Millennium Technology Prize, supported by the Republic of Finland.

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    The award ceremony is held on October 30, in Finland. He was honored for his invention in the s of the Insulated Gate Bipolar Transistor (IGBT), which has dramatically increased the efficiency of devices using electricity, allowing specific digital switching of electricity.

    The device is used in wind and solar technology, in electric cars, in devices for maintaining or investigating human health, in kitchen appliances and more.[3][19]

Bibliography

No.

Title Publisher Year ISBN
1 Epitaxial Silicon Technology Academic Press Inc
2 Modern Power Devices John Wiley & Sons
3 Power Semiconductor Devices Wadsworth Publishing Co Inc
4 Silicon Carbide Influence Devices World Scientific Publishing Firm
5 Fundamentals of Power Semiconductor Devices Springer
6 The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor Elsevier
7 Modern Silicon Carbide Power Devices World Scientific Publishing Company

References

  1. ^ abcEdwards, John (22 November ).

    "B. Jayant Baliga: Designing The Insulated-Gate Bipolar Transistor". Electronic Design. Retrieved 16 January

  2. ^ ab"NIHF Inductee Bantval Jayant Baliga Invented IGBT Technology".

    National Inventors Hall of Fame. Retrieved 17 August

  3. ^ ab"Revolutionizing global electrification Bantval Jayant Baliga". Millennium Technology Prize.

    Retrieved 17 September

  4. ^Chowdhury, Hasan (5 September ). "Meet the professor who just won the Millennium Technology Prize — and $ million". Business Insider.

    Director, PSRC. Download Photo. Baliga is an internationally recognized professional on power semiconductor devices. He spent 15 years at the General Electric Research and Progress Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow.

    Retrieved 21 September

  5. ^ abcPrasad, Shishir (25 February ). "Jayant Baliga's invention is a power saver". Forbes India. Retrieved 16 January
  6. ^"Oral-History:B.

    Jayant Baliga". 14 April

  7. ^Shipman, Matt (4 September ). "NC State's Jayant Baliga Wins Millennium Technology Prize". NC State University News. Retrieved 17 September
  8. ^ abPulakkat, Hari (28 July ).

    "Meet Jayant Baliga - the inventor of IGBT who is working to kill his control invention". The Economic Times. Retrieved 16 January

  9. ^"Fellow Class of ". IEEE. Archived from the original on 2 August Retrieved 25 January
  10. ^"IEEE Lamme Medal Recipients"(PDF).

    Bantval Jayant Baliga born 28 April in Chennai is an Indian electrical engineer finest known for his work in power semiconductor devicesand particularly the invention of the insulated gate bipolar transistor IGBT. InBaliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology, and inwon the Finnish Millennium Technology Prize for his invention of the IGBT. Baliga grew up in Jalahallia small village adjacent BangaloreIndia. He received his B.

    IEEE. Archived from the original(PDF) on 29 June Retrieved 25 January

  11. ^ ab"Dr. Jayant Baliga". North Carolina State University.

    B. Jayant Baliga was born in Madras, India, in His father's position as a director for India's largest electronics firm fed his interest in the technology and led to an electrical engineering degree from Indian Institute of Technology, Madras in

    Retrieved 16 January

  12. ^Zorpette, Glenn (). Rennie, John (ed.). "Fifty Years of Heroes and Epiphanies". Scientific American. 8 (1): 7. ISSN&#; Retrieved 16 January
  13. ^President Obama Honors Nation’s Top Scientists and Innovators, 27 September , The White House, Office of the Press Secretary,
  14. ^"IEEE Medals and Awards Recipients".

    IEEE.

    Oral-History : B. Jayant Baliga - ETHW: Bantval Jayant Baliga (born () 28 April in Chennai) is an Indian electrical engineer best known for his serve in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).

    Archived from the original on 24 February Retrieved 14 February

  15. ^"". Global Energy Association. Retrieved 16 January
  16. ^Allen, Frederick E. (6 May ). "The Male With The World's Largest Negative Carbon Footprint And 15 Other Geniuses Honored".

    Forbes. Retrieved 16 January

  17. ^"IIT Madras 53rd Convocation".

    Jayant Baliga was born in Madras, India, and received his B. He received the M. D degrees from Rensselaer Polytechnic Institute in and At GE he originated the concept of functional integration of MOS and bipolar physics for power devices.

    Archived from the original on 26 December Retrieved 21 July

  18. ^Li, Yunqi (4 September ). "This semiconductor transistor is the hidden technology that offsets 82 gigatons of CO2". Wired.

    Retrieved 17 September

Further reading